r o h s www.littelfuse.com 3 - 8 ? 2006 littelfuse ? telecom design guide microcapacitance (mc) sa sidactor ? device these do-214aa samc sidactor devices are intended for applications sensitive to load values. typically, high speed connections, such as ethernet, xdsl, and t1/e1, require a lower capacitance. c o values for the microcapacitance device are 40% lower than a standard sa part. this samc sidactor series enables equipment to comply with various regulatory requirements including gr 1089, itu k.20, k.21, and k.45, iec 60950, ul 60950, and tia- 968-a (formerly known as fcc part 68). * ?l? in part number indicates rohs compliance. for non-rohs compliant device, delete ?l? from part number. for surge ratings, see table below. general notes: ? all measurements are made at an ambient temperature of 25 c. i pp applies to -40 c through +85 c temperature range. ? i pp is a repetitive surge rating and is guaranteed for the life of the product. ? listed sidactor devices are bi-directional. all electr ical parameters and surge ratings apply to forward and reverse polarities. ? v drm is measured at i drm. ? v s is measured at 100 v/s. ? special voltage (v s and v drm ) and holding current (i h ) requirements are available upon request. * current waveform in s ** voltage waveform in s electrical parameters part number * v drm volts v s volts v t volts i drm amps i s mamps i t amps i h mamps p0080samcl 6 25 4 5 800 2.2 50 p0220samcl 15 32 4 5 800 2.2 50 P0300SAMCL 25 40 4 5 800 2.2 50 surge ratings in amps series i pp i tsm 50 / 60 hz di/dt 0.2x310 * 0.5x700 ** 2x10 * 2x10 ** 8x20 * 1.2x50 ** 10x160 * 10x160 ** 10x560 * 10x560 ** 5x320 * 9x720 ** 10x360 * 10x360 ** 10x1000 * 10x1000 ** 5x310 * 10x700 ** amps amps amps amps amps amps amps amps amps amps amps/s a 20 150 150 90 50 75 75 45 75 20 500
microcapacitance (mc) sa sidactor? device telecom design guide ? ? 2006 littelfuse 3 - 9 www.littelfuse.com sidactor devices note: off-state capacitance (c o ) is measured at 1 mhz with a 2 v bias. thermal considerations package symbol parameter value unit do-214aa t j operating junction temperature range -40 to +150 c t s storage temperature range -65 to +150 c r ja thermal resistance: junction to ambient 90 c/w capacitance values part number pf min max p0080samcl 25 55 p0220samcl 25 50 P0300SAMCL 15 35 i h i t i s i drm v drm v t + v -v +i -i v s v-i characteristics 50 100 0 t r t d 0 peak value half value t ? time (s) i pp ? peak pulse current ? %i pp t r = rise time to peak value t d = decay time to half value waveform = t r x t d t r x t d pulse waveform -8 -40 -20 0 20 40 60 80 100 120 140 160 -6 -4 0 2 4 6 8 10 12 14 junction temperature (t j ) ? ?c percent of v s change ? % 25 ?c normalized v s change versus junction temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 case temperature (t c ) ? ?c ratio of i h i h (t c = 25 ?c) 25 ?c normalized dc holding current versus case temperature
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